基本解释：场效应电晶体
汉语字典(www.zxzidian.com)行业英语频道为您提供场效应电晶体的英文是Field effect transistor (FET)，Field effect transistor (FET)的意思，Field effect transistor (FET)是什么意思等内容，如果您正在查询Field effect transistor (FET)缩写的全称、翻译、解释等信息，本页内容可供您参考
A hyperbola model of I _D- V _Gcharacteristics of ferroelectric field-effect-transistors(FFETs) with Ag/Bi_4Ti_3O_ 12gate was brought forward,which is based on the theory of MOS device and the experimental data of the FFET.在理论分析的基础上,结合铁电材料特性及实验数据,提出了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管转换(ID-VG)特性的双曲模型并进行了数值模拟。
Objective To investigate characteristics of p-channel field-effect-transistor(FFET) with Metal/ferroelectric/Metal/Insulator/Si substrates(MFMIS) structure.目的研究金属/铁电/金属/多晶硅/绝缘层/Si衬底(MFMIS)结构的p沟道铁电场效应晶体管的性能。
Metal-ferroelectric-semiconductor field-effect-transistors (FFETs) with Ag/Bi_4Ti_3O_ 12 /p-Si gate were fabricated using the high quality Bi_4Ti_3O_ 12 on p-Si substrates prepared by Sol-Gel technique.在溶胶-凝胶工艺获得高质量Bi4Ti3O12薄膜的基础上,制备了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.铁电场效应晶体管(FFET)存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
double diffused mos fetdmos场效应晶体管
metal insulator semiconductor fetmis场效应晶体管
polysilicon fet多晶硅场效应晶体管
vertical junction fet垂向结型场效应晶体管
n-channel transistorｎ沟道场效应晶体管
vertical channel fet垂直沟道场效应晶体管
linear load field effect transistor线性负载场效应晶体管
multichannel fet多通道场效应晶体管
multiple gate finger fet多梳形栅场效应晶体管
single gate FET单栅极场效应晶体管
ion implanted fet离子注入场效应晶体管
ion selective field effect transistor离子选择场效应晶体管
field-effect-transistor resistor场效应晶体管电阻器
offset gate fet补偿栅场效应晶体管
normally on fet耗尽型场效应晶体管
normally off fet增强型场效应晶体管
junction gate field effect transistor面结型栅场效应晶体管
