基本解释：退火状态
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Improving contact of CNT-metal by annealing;利用退火的碳纳米管与金属接触特性的改善
Study on optimal current density to annealing Fe-based amorphous wire by pulse current;铁基纳米非晶丝脉冲电流退火的最佳电流密度研究
Measures of Improving Qualification Rate of Intermediate Annealed Air-Conditioner Pipe of 1050A Aluminum Alloy;提高1050A铝合金空调管中间退火合格率的措施
Influence of annealing condition on the stress impedance of Fe-based amorphous alloy ribbons;退火条件对铁基非晶薄带压应力阻抗效应的影响
Influence of annealing in different air atmosphere on optical properties of CdWO_4;退火对钨酸镉晶体光谱性能影响的研究
Effect of annealing on magnetic properties of Fe-based glassy alloy;铁基金属玻璃区间退火对磁性能影响的研究
The film was annealed at 550℃,900℃ and 1100℃.对550℃沉积态薄膜在900℃、1100℃时进行高温退火处理,硅衍射峰明显加强。
Effects of annealing treatment on the rare earth-based low-Co hydrogen storage alloy;退火对稀土系AB_5低钴贮氢合金的影响
Effects of annealing treatment on low-Co hydrogen storage alloy;退火对低钴贮氢合金的影响
Annealing treatment improves the crystallinity of electrodeposited films and the effective grain size increases,resulting .5,并对沉积薄膜400℃左右Ar气氛中退火20min。
The effect of the thermal annealing temperature on the electrical and optical properties of Mg-doped InGaN/GaN heterostructures in O 2 ambient was systematically investigated.系统地研究了氧气氛围中退火温度对Mg掺杂InGaN/GaN异质结电学特性及光学性能的影响。
The InP material surface is degenerated after ion implantation,and is repaired after thermal annealing above 300℃.当离子注入后InP表面电学特性退化,在300℃以上退火后,材料表面回复较好,H+离子注入区电阻率约为InP体材料的104倍。
By X-ray diffraction(XRD) and scanning electron microscope (SEM) , the influences of substrate temperature, the ratio of Ar to O_2 and thermal annealing temperature on ZnO crystal qualit.本实验用XRD和SEM研究了工艺条件如基片温度、氩氧比及退火工艺对ZnO薄膜结构特性的影响。
