基本解释：外延性质
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Study on the evolution of Au heteroepitaxial islands on Cu(001) by molecular dynamics simulation;Au/Cu(001)异质外延岛演化的分子动力学研究
The heteroepitaxial diamond films were grown on the p\|type Si (100) substrate by microwave plasma chemical vapor deposition (CVD).在p型硅 (10 0 )衬底上 ,采用衬底负偏压微波等离子体CVD方法进行了p型异质外延金刚石膜的生长 。
In this thesis, the heteroepitaxial growths for Au/Cu(001), Au/Cu(111), Ag/Cu(001), Ag/Cu(111), Cu/Au(001) and Cu/Au(111) were simulated by molecular dynamic method(MD) with embedded atom method(EAM).异质外延生长是薄膜生长中的重要研究课题,从原子水平上认识异质薄膜生长的物理本质,对于改进制备工艺和提高薄膜质量都有着重要的指导作用。
InP/GaAs, GaAs/Si and InP/GaAs/Si Heteroepitaxy Technologies and Their Applications in Integrated Optoelectronic Devices;InP/GaAs、GaAs/Si、InP/GaAs/Si异质外延生长技术及其在集成光电子器件中的应用
Molecular dynamics simulation has been used to study the heteroepitaxy of Cu/Au(001) and Au/Cu(001) with the embedded atom potentials.利用分子动力学模拟方法研究了Cu/Au(001)和Au/Cu(001)异质外延岛的演化行为。
We demonstrate a tunable long-wavelength photodetector by using a heteroepitaxy growth of an InP-In0.基于此低温缓冲层,在GaAs衬底上首先生长GaAs/AlAs材料的F-P腔滤波器,然后异质外延InP-In0。
Defects in 4H-SiC Homoepitaxy CVD Growth;4H-SiC同质外延中的缺陷
The materials of semiconductor hetero-epitaxy and quantum dots are widely used in the fields such as nano-electronics and optoelectronics.半导体异质外延材料和量子点材料在纳米电子学、光电子学中具有广泛的应用前景。
High quality 4H-SiC homoepitaxial layers were grown on 8° off-axis 〈0001〉 HP-S.在高纯半绝缘4H-SiC偏8°衬底上同质外延生长了高质量的外延层,利用X射线双晶衍射、原子力显微镜(AFM)、汞探针C-V以及霍尔效应等测试方法,对样品的结晶质量、表面粗糙度、掺杂浓度以及电子迁移率进行了分析测试,证实外延层的结晶质量相对于衬底有着很大的改善。
Fabrication of high-quality ZnO/Si heteroepitaxial films by pulsed laser depositionPLD工艺制备高质量ZnO/Si异质外延薄膜
Investigations of Heteroepitaxy and New Semiconductor Materials for Optoelectronic Integration光电子集成中的异质外延与新材料研究
Heteroepitaxial Growth of InP on GaAs Using Low-temperature InGaP Buffer Layers with Graded Composition基于低温InGaP组分渐变缓冲层的InP/GaAs异质外延
Geometric phase analysis of strain in AlSb/GaAs hetero-epitaxial film by HRTEMAlSb/GaAs异质外延薄膜应变的HRTEM几何相位分析
Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Composite SubstratesAlN/Si(111)复合衬底上4H-SiC薄膜的异质外延
Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology异质外延GaN薄膜中缺陷对表面形貌的影响
Study of Growth Technology and Structural Properties of SiC Films on Sapphire Compound Substrate;碳化硅宽带隙半导体薄膜的异质外延生长技术及其结构性质分析
Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition同质与异质外延掺杂CVD金刚石薄膜的结构与性能
Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管(摘要)
Study on Energetic Deposition and Heteroepitaxial Behavior by Moleculer Dynamics Simulation;载能沉积过程与异质外延生长行为的分子动力学模拟研究
Study on Heteroepitaxial Growth of Au/Cu,Ag/Cu and Cu/Au System by Molecular Dynamics Dynamics Simulation;Au/Cu、Ag/Cu及Cu/Au体系异质外延生长的分子动力学研究
Theoretical and Experimental Research on GaAs/Si Heteroepitaxial and Boron-Incorporated Photoelectronic Materials;GaAs/Si和含B光电子材料异质外延生长的理论和实验研究
XRD Characterization of GaAs-Based Hetero-Epitaxy Materials and SiC MESFET Structure Materials;GaAs多层异质外延结构材料和SiC MESFET结构材料的X射线双晶衍射分析
GaAs/InP and Si/GaAs Heteroepitaxy and Their Applications in Integrated Optoelectronic DevicesGaAs/InP、Si/GaAs异质外延生长技术及其在集成光电子器件中的应用
The Calculation of Strain Field in Semiconductor Heteroepitaxy Material and Quantum Dot Relax Degree半导体异质外延材料的应变场及量子点弛豫度的计算
Heteroepitaxial growth of InP/GaAs using low-temperature In_xGa_(1-x)P graded buffers基于低温In_xGa_(1-x)P组分渐变缓冲层的InP/GaAs异质外延
It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.结果表明外延层具有平坦的异质结界面和良好的晶体特性。
Fabrication and Properties of Epitaxial Stannate Thin-films and Heterojunctions with the Perovskite Structure钙钛矿锡酸盐外延薄膜及相关异质结制备与物性研究
